We are pleased to share that Silizium Circuits has successfully completed the end-to-end design of a GaAs-based 5G low-noise amplifier (LNA) front-end chip—marking a significant milestone in our journey toward building high-performance RF and analog semiconductor solutions from India.
The newly developed 5G LNA is designed to deliver high gain, low noise, and strong linearity, enabling reliable signal reception in demanding wireless environments. The solution is targeted for deployment across next-generation communication systems and strategic applications.
Key product highlights include:
-
GaAs-based 5G LNA optimized for high-performance RF front-end applications
-
Designed to enhance weak signal amplification with low noise figure
-
Suitable for 5G base stations, satellite communication (SATCOM), and GNSS platforms
-
Applicable to commercial, defence, and strategic communication systems
Key achievement highlights:
-
Complete end-to-end chip design executed in India
-
Developed with support from the Department of Telecommunications’ DCIS initiative
-
Strengthens indigenous RF and GaAs semiconductor design capabilities
-
Reinforces India’s growing role in the global fabless semiconductor ecosystem
This achievement reflects our continued focus on developing globally competitive semiconductor IPs while contributing to national efforts in advanced communication technologies.
Read more about this development on DIGITIMES Asia